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RCHIVE INFORMATION
MRF18090AR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistor
N--Channel Enhancement--Mode Lateral MOSFET
Designed for GSM and GSM EDGE base station applications with frequencies
from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications. To be used in Class AB for GSM and GSM EDGE cellular radio
applications.
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GSM and GSM EDGE Performances @ 1805 MHz
Power Gain ? 13.5 dB (Typ) @ 90 Watts CW
Efficiency ? 52% (Typ) @ 90 Watts CW
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Capable of Handling 10:1 VSWR, @ 26 Vdc, 90 Watts CW Output Power
Features
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Internally Matched for Ease of Use
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High Gain, High Efficiency and High Linearity
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Integrated ESD Protection
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Designed for Maximum Gain and Insertion Phase Flatness
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Excellent Thermal Stability
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Characterized with Series Equivalent Large--Signal Impedance Parameters
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RoHS Compliant
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In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +65
Vdc
Gate--Source Voltage
VGS
--0.5, +15
Vdc
Total Device Dissipation @ TC
=25°C
Derate above 25°C
PD
250
1.43
W
W/°C
Storage Temperature Range
Tstg
-- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
RθJC
0.7
°C/W
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
2 (Minimum)
Machine Model
M3 (Minimum)
Document Number: MRF18090A
Rev. 8, 10/2008
Freescale Semiconductor
Technical Data
MRF18090AR3
1805--1880 MHz, 90 W, 26 V
LATERAL N--CHANNEL
RF POWER MOSFET
CASE 465B--03, STYLE 1
NI--880
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Freescale Semiconductor, Inc., 2008, 2010.
All rights reserved.
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